Ultrathin organic solar cells with graphene doped by ferroelectric polarization.
Identifieur interne : 000012 ( Main/Exploration ); précédent : 000011; suivant : 000013Ultrathin organic solar cells with graphene doped by ferroelectric polarization.
Auteurs : RBID : pubmed:24521002Abstract
Graphene has been employed as transparent electrodes in organic solar cells (OSCs) because of its good physical and optical properties. However, the electrical conductivity of graphene films synthesized by chemical vapor deposition (CVD) is still inferior to that of conventional indium tin oxide (ITO) electrodes of comparable transparency, resulting in a lower performance of OSCs. Here, we report an effective method to improve the performance and long-term stability of graphene-based OSCs using electrostatically doped graphene films via a ferroelectric polymer. The sheet resistance of electrostatically doped few layer graphene films was reduced to ∼70 Ω/sq at 87% optical transmittance. Such graphene-based OSCs exhibit an efficiency of 2.07% with a superior stability when compared to chemically doped graphene-based OSCs. Furthermore, OSCs constructed on ultrathin ferroelectric film as a substrate of only a few micrometers show extremely good mechanical flexibility and durability and can be rolled up into a cylinder with 7 mm diameter.
DOI: 10.1021/am405270y
PubMed: 24521002
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Ultrathin organic solar cells with graphene doped by ferroelectric polarization.</title><author><name sortKey="Kim, Keumok" uniqKey="Kim K">Keumok Kim</name><affiliation wicri:level="1"><nlm:affiliation>School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749</wicri:regionArea></affiliation></author><author><name sortKey="Bae, Sang Hoon" uniqKey="Bae S">Sang-Hoon Bae</name></author><author><name sortKey="Toh, Chee Tat" uniqKey="Toh C">Chee Tat Toh</name></author><author><name sortKey="Kim, Hobeom" uniqKey="Kim H">Hobeom Kim</name></author><author><name sortKey="Cho, Jeong Ho" uniqKey="Cho J">Jeong Ho Cho</name></author><author><name sortKey="Whang, Dongmok" uniqKey="Whang D">Dongmok Whang</name></author><author><name sortKey="Lee, Tae Woo" uniqKey="Lee T">Tae-Woo Lee</name></author><author><name sortKey="Ozyilmaz, Barbaros" uniqKey="Ozyilmaz B">Barbaros Özyilmaz</name></author><author><name sortKey="Ahn, Jong Hyun" uniqKey="Ahn J">Jong-Hyun Ahn</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/am405270y</idno><idno type="RBID">pubmed:24521002</idno><idno type="pmid">24521002</idno><idno type="wicri:Area/Main/Corpus">000157</idno><idno type="wicri:Area/Main/Curation">000157</idno><idno type="wicri:Area/Main/Exploration">000012</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Graphene has been employed as transparent electrodes in organic solar cells (OSCs) because of its good physical and optical properties. However, the electrical conductivity of graphene films synthesized by chemical vapor deposition (CVD) is still inferior to that of conventional indium tin oxide (ITO) electrodes of comparable transparency, resulting in a lower performance of OSCs. Here, we report an effective method to improve the performance and long-term stability of graphene-based OSCs using electrostatically doped graphene films via a ferroelectric polymer. The sheet resistance of electrostatically doped few layer graphene films was reduced to ∼70 Ω/sq at 87% optical transmittance. Such graphene-based OSCs exhibit an efficiency of 2.07% with a superior stability when compared to chemically doped graphene-based OSCs. Furthermore, OSCs constructed on ultrathin ferroelectric film as a substrate of only a few micrometers show extremely good mechanical flexibility and durability and can be rolled up into a cylinder with 7 mm diameter.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24521002</PMID><DateCreated><Year>2014</Year><Month>03</Month><Day>12</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>5</Issue><PubDate><Year>2014</Year><Month>Mar</Month><Day>12</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Ultrathin organic solar cells with graphene doped by ferroelectric polarization.</ArticleTitle><Pagination><MedlinePgn>3299-304</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am405270y</ELocationID><Abstract><AbstractText>Graphene has been employed as transparent electrodes in organic solar cells (OSCs) because of its good physical and optical properties. However, the electrical conductivity of graphene films synthesized by chemical vapor deposition (CVD) is still inferior to that of conventional indium tin oxide (ITO) electrodes of comparable transparency, resulting in a lower performance of OSCs. Here, we report an effective method to improve the performance and long-term stability of graphene-based OSCs using electrostatically doped graphene films via a ferroelectric polymer. The sheet resistance of electrostatically doped few layer graphene films was reduced to ∼70 Ω/sq at 87% optical transmittance. Such graphene-based OSCs exhibit an efficiency of 2.07% with a superior stability when compared to chemically doped graphene-based OSCs. Furthermore, OSCs constructed on ultrathin ferroelectric film as a substrate of only a few micrometers show extremely good mechanical flexibility and durability and can be rolled up into a cylinder with 7 mm diameter.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Keumok</ForeName><Initials>K</Initials><Affiliation>School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Bae</LastName><ForeName>Sang-Hoon</ForeName><Initials>SH</Initials></Author><Author ValidYN="Y"><LastName>Toh</LastName><ForeName>Chee Tat</ForeName><Initials>CT</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hobeom</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Cho</LastName><ForeName>Jeong Ho</ForeName><Initials>JH</Initials></Author><Author ValidYN="Y"><LastName>Whang</LastName><ForeName>Dongmok</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Tae-Woo</ForeName><Initials>TW</Initials></Author><Author ValidYN="Y"><LastName>Özyilmaz</LastName><ForeName>Barbaros</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Ahn</LastName><ForeName>Jong-Hyun</ForeName><Initials>JH</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>02</Month><Day>24</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>2</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am405270y</ArticleId><ArticleId IdType="pubmed">24521002</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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